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1 TGS4306-FC november 2009 ? rev b triquint semiconductor: www. triquint.com (972)994 -8465 fax (972)994-8504 info-mmw@tqs.com primary applications product description key features measured performance 70-90 ghz sp4t switch flip chip bias conditions, off: vd = 1.35 v, id = 10 ma, sta te 5 typical on: vd = -5v, id = 0 ma, state 2 rf in to rf out 2 ? frequency range: 70-90 ghz ? 3.0 db typical flipped insertion loss ? 20 db nominal isolation ? 8 db typical thru state return loss ? < 5 nsec switching speed ? integrated dc blocking at rf ports ? chip dimensions: 1.69 x 1.37 x 0.38 mm (0.067 x 0.054 x 0.015 in) ? automotive transceivers ? e-band transceivers the triquint TGS4306-FC is a 70-90 ghz sp4t switch. this part is designed using triquint?s proven standard vpin production process. the switching speed for tgs4306- fc is < 5 nsec typically. the TGS4306-FC, when flipped, provides a nominal 3.0 db insertion loss, 8 db return loss in the thru state, and 20 db isolation in the automotive band. the TGS4306-FC integrates dc blocking capacitors on all output ports to reduce the number of off-chip components. the TGS4306-FC has a protective surface passivation layer providing environmental robustness. lead-free and rohs compliant -40 -30 -20 -10 0 70 72 74 76 78 80 82 84 86 88 90 frequency (ghz) s21 (db) on off -25 -20 -15 -10 -5 0 70 72 74 76 78 80 82 84 86 88 90 frequency (ghz) return loss (db) s11 s22 state 2
2 TGS4306-FC november 2009 ? rev b triquint semiconductor: www. triquint.com (972)994 -8465 fax (972)994-8504 info-mmw@tqs.com table ii recommended operating conditions truth table table i absolute maximum ratings 1 / state rf in to rf out 1 rf in to rf out 2 rf in to rf out 3 rf in to rf out 4 vd1 vd2 vd3 vd4 1 on off off off -5 v @ 0 ma 1.35 v @ 10 ma 1.35 v @ 10 ma 1.35 v @ 10 ma 2 off on off off 1.35 v @ 10 ma -5 v @ 0 ma 1.35 v @ 10 ma 1.35 v @ 10 ma 3 off off on off 1.35 v @ 10 ma 1.35 v @ 10 ma -5 v @ 0 ma 1.35 v @ 10 ma 4 off off off on 1.35 v @ 10 ma 1.35 v @ 10 ma 1.35 v @ 10 ma -5 v @ 0 ma 5 off off off off 1.35 v @ 10 ma 1.35 v @ 10 ma 1.35 v @ 10 ma 1.35 v @ 10 ma symbols parameter values notes vd1,2,3,4 maximum supply voltage -15 v to 2 v id1,2,3,4 maximum supply current 15 ma pin maximum input power 27 dbm tstg storage temperature -65 to 150 0 c 1 / these ratings represent the maximum operating v alues for this device.
3 TGS4306-FC november 2009 ? rev b triquint semiconductor: www. triquint.com (972)994 -8465 fax (972)994-8504 info-mmw@tqs.com table iii rf characterization table parameter through path identification test conditions minimum nominal maximum u nits insertion loss (state 3) rf input to rf output 1 rf input to rf output 2 rf input to rf output 3 rf input to rf output 4 f = 76 ? 77 ghz 2.5 4.5 db isolation on/off ratio (state 3 / 5) rf input to rf output 1 rf input to rf output 2 rf input to rf output 3 rf input to rf output 4 f = 76 ? 77 ghz 16 20 db input return loss (state 3) rf input to rf output 1 rf input to rf output 2 rf input to rf output 3 rf input to rf output 4 f = 76 ? 77 ghz 5 9 db output return loss (state 3) rf input to rf output 1 rf input to rf output 2 rf input to rf output 3 rf input to rf output 4 f = 76 ? 77 ghz 5 9 db (ta = 25 c, nominal) probe tip calibration id = 6 ma typical
4 TGS4306-FC november 2009 ? rev b triquint semiconductor: www. triquint.com (972)994 -8465 fax (972)994-8504 info-mmw@tqs.com measured data rf in to rf out 2 -5 -4 -3 -2 -1 0 70 72 74 76 78 80 82 84 86 88 90 frequency (ghz) s21 (db) rf in to rf out 2 -40 -30 -20 -10 0 70 72 74 76 78 80 82 84 86 88 90 frequency (ghz) s21 (db) insertion loss state 2 state 5
5 TGS4306-FC november 2009 ? rev b triquint semiconductor: www. triquint.com (972)994 -8465 fax (972)994-8504 info-mmw@tqs.com measured data rf in to rf out 2 -25 -20 -15 -10 -5 0 70 72 74 76 78 80 82 84 86 88 90 frequency (ghz) irl, orl (db) s11 s22 rf in to rf out2 -25 -20 -15 -10 -5 0 70 72 74 76 78 80 82 84 86 88 90 frequency (ghz) irl, orl (db) s11 s22 return loss state 2 state 5
6 TGS4306-FC november 2009 ? rev b triquint semiconductor: www. triquint.com (972)994 -8465 fax (972)994-8504 info-mmw@tqs.com measured data rf in to rf out 4 -5 -4 -3 -2 -1 0 70 72 74 76 78 80 82 84 86 88 90 frequency (ghz) s21 (db) rf in to rf out 4 -40 -30 -20 -10 0 70 72 74 76 78 80 82 84 86 88 90 frequency (ghz) s21 (db) state 4 state 5 insertion loss
7 TGS4306-FC november 2009 ? rev b triquint semiconductor: www. triquint.com (972)994 -8465 fax (972)994-8504 info-mmw@tqs.com measured data rf in to rf out 4 -25 -20 -15 -10 -5 0 70 72 74 76 78 80 82 84 86 88 90 frequency (ghz) irl, orl (db) s11 s22 rf in to rf out 4 -25 -20 -15 -10 -5 0 70 72 74 76 78 80 82 84 86 88 90 frequency (ghz) irl, orl (db) s11 s22 state 4 state 5
8 TGS4306-FC november 2009 ? rev b triquint semiconductor: www. triquint.com (972)994 -8465 fax (972)994-8504 info-mmw@tqs.com electrical schematic gaas mmic devices are susceptible to damage from el ectrostatic discharge. proper precautions should be observed during handling, assembly and test.
9 TGS4306-FC november 2009 ? rev b triquint semiconductor: www. triquint.com (972)994 -8465 fax (972)994-8504 info-mmw@tqs.com mechanical drawing drawing is for chip face up units: millimeters (inches) thickness: 0.380 (0.015). die x, y size tolerance : +/- 0.050 (0.002) chip edge to pillar dimensions are shown to center of pillar pillar # 1 rf in 0.075 pillar # 5 rf out 1 0.075 pillar # 9 rf out 2 0.075 pillar # 12 rf out 3 0.075 pillar # 16 rf out 4 0.075 pillar # 3 vd1 0.075 pillar # 7 vd2 0.075 pillar # 14 vd3 0.075 pillar # 18 vd4 0.075 pillar # 20, 21 dc ground 0.075 pillar # 2, 4, 6, 8, 10, 11, 13, 15, 17, 19 rf cpw g round 0.075
10 TGS4306-FC november 2009 ? rev b triquint semiconductor: www. triquint.com (972)994 -8465 fax (972)994-8504 info-mmw@tqs.com gaas mmic devices are susceptible to damage from el ectrostatic discharge. proper precautions should be observed during handling, assembly and test. recommended assembly diagram TGS4306-FC sp4t die TGS4306-FC sp4t data represented in this datasheet was taken using co-planar waveguide (cpw) transition on the shown substrate and ground-signal-ground probes. bypass capacitors not required. rf in rf out 2 rf out 1 rf out 3 vd 3 vd 2 vd 1 die is flip-chip soldered to substrate rf out 4 vd 4 alumina substrate board thickness: 0.015 in. r = 9.9
11 TGS4306-FC november 2009 ? rev b triquint semiconductor: www. triquint.com (972)994 -8465 fax (972)994-8504 info-mmw@tqs.com gaas mmic devices are susceptible to damage from el ectrostatic discharge. proper precautions should be observed during handling, assembly and test. assembly notes component placement and die attach assembly notes: ? vacuum pencils and/or vacuum collets are the prefe rred method of pick up. ? air bridges must be avoided during placement. ? cu pillars on die are 65 um tall with a 22 um tall sn solder cap. ? recommended board metallization is evaporated tiw f ollowed by nickel/gold at pillar attach interface. ni is the adhesion layer for the solder and the gold keeps the ni from oxidizing . the au should be kept to a minimum to avoid embri ttlement; suggested au / sn mass ratio must not exceed 8%. ? au metallization is not recommended on traces due to solder wicking and consumption concerns. if au traces are used, a physical solder barrier must be applied or designed into the pad area of the board. the barrier must be suffici ent to keep the solder from undercutting the barrier. reflow process assembly notes: ? minimum alloying temperatures 245 ?c. ? repeating reflow cycles is not recommended due to sn consumption on the first reflow cycle. ? an alloy station or conveyor furnace with an inert atmosphere such as n2 should be used. ? dip copper pillars in ?no-clean flip chip? flux pri or to solder attach. suggest using a high temperatu re flux. avoid exposing entire die to flux. ? if screen printing flux, use small apertures and m inimize volume of flux applied. ? coefficient of thermal expansion matching between the mmic and the substrate/board is critical for lo ng-term reliability. ? devices must be stored in a dry nitrogen atmospher e. ? suggested reflow will depend on board material and density. see triquint application note for flip-chip solderi ng process: tbd typical reflow profiles for triquint cu / sn pillars process sn reflow ramp-up rate 3 ? c/sec flux activation time and temperature 60 ? 120 sec @ 1 40 ? 160 ? c time above melting point (245 ? c) 60 ? 150 sec max peak temperature 300 ? c time within 5 ? c of peak temperature 10 ? 20 sec ramp-down rate 4 ? 6 ? c/sec ordering information part package style tga4306-fc gaas mmic die

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